Self-Assembled InGaAs Quantum Dot Clusters with Controlled Spatial and Spectral Properties
Identifieur interne : 001583 ( Main/Repository ); précédent : 001582; suivant : 001584Self-Assembled InGaAs Quantum Dot Clusters with Controlled Spatial and Spectral Properties
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Abstract
Plantar quantum dot dusters (QDCs) consisting of six InGaAs quantum dots (QDs) formed around a GaAs nanomound are the most sophisticated self-assembled QDCs grown by molecular beam epitaxy thus far. We present the first photoluminescence measurements on individual hexa-QDCs with high spatial, spectral, and temporal resolution. In the best QDCs, the excitons confined in individual QDs are remarkably close in energy, exhibiting only a 10 meV spread. In addition, a biexponential decay profile and small variation in decay rates for different QDs was observed. The homogeneous energetics and dynamics suggest that the sizes, shapes, and composition of the QDs within these clusters are highly uniform.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Self-Assembled InGaAs Quantum Dot Clusters with Controlled Spatial and Spectral Properties</title><author><name sortKey="Creasey, Megan" uniqKey="Creasey M">Megan Creasey</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Physics, University of Texas at Austin</s1><s2>Austin, Texas 78712</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Austin (Texas)</settlement><region type="state">Texas</region></placeName><orgName type="university">Université du Texas à Austin</orgName></affiliation></author><author><name sortKey="Lee, Ji Hoon" uniqKey="Lee J">Ji-Hoon Lee</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, Kwangwoon University</s1><s2>Seoul 139-701</s2><s3>KOR</s3><sZ>2 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute for Nanoscale Science and Engineering, University of Arkansas</s1><s2>Fayetteville, Arkansas 72701</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Fayetteville, Arkansas 72701</wicri:noRegion></affiliation></author><author><name>ZHIMING WANG</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China</s1><s2>Chengdu 610054</s2><s3>CHN</s3><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Chengdu 610054</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute for Nanoscale Science and Engineering, University of Arkansas</s1><s2>Fayetteville, Arkansas 72701</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Fayetteville, Arkansas 72701</wicri:noRegion></affiliation></author><author><name sortKey="Salamo, Gregory J" uniqKey="Salamo G">Gregory J. Salamo</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute for Nanoscale Science and Engineering, University of Arkansas</s1><s2>Fayetteville, Arkansas 72701</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Fayetteville, Arkansas 72701</wicri:noRegion></affiliation></author><author><name>XIAOQIN LI</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Physics, University of Texas at Austin</s1><s2>Austin, Texas 78712</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Austin (Texas)</settlement><region type="state">Texas</region></placeName><orgName type="university">Université du Texas à Austin</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0415420</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0415420 INIST</idno><idno type="RBID">Pascal:12-0415420</idno><idno type="wicri:Area/Main/Corpus">001685</idno><idno type="wicri:Area/Main/Repository">001583</idno></publicationStmt><seriesStmt><idno type="ISSN">1530-6984</idno><title level="j" type="abbreviated">Nano lett. : (Print)</title><title level="j" type="main">Nano letters : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Excitons</term><term>Gallium arsenides</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Molecular beam epitaxy</term><term>Nanostructured materials</term><term>Photoluminescence</term><term>Quantum dots</term><term>Self-assembly</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Autoassemblage</term><term>Point quantique</term><term>Nanomatériau</term><term>Composé III-V</term><term>Semiconducteur III-V</term><term>Epitaxie jet moléculaire</term><term>Photoluminescence</term><term>Spectre résolution temporelle</term><term>Exciton</term><term>Arséniure d'indium</term><term>Arséniure de gallium</term><term>InGaAs</term><term>GaAs</term><term>8116D</term><term>8107T</term><term>8535B</term><term>8107B</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Plantar quantum dot dusters (QDCs) consisting of six InGaAs quantum dots (QDs) formed around a GaAs nanomound are the most sophisticated self-assembled QDCs grown by molecular beam epitaxy thus far. We present the first photoluminescence measurements on individual hexa-QDCs with high spatial, spectral, and temporal resolution. In the best QDCs, the excitons confined in individual QDs are remarkably close in energy, exhibiting only a 10 meV spread. In addition, a biexponential decay profile and small variation in decay rates for different QDs was observed. The homogeneous energetics and dynamics suggest that the sizes, shapes, and composition of the QDs within these clusters are highly uniform.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1530-6984</s0></fA01><fA03 i2="1"><s0>Nano lett. : (Print)</s0></fA03><fA05><s2>12</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Self-Assembled InGaAs Quantum Dot Clusters with Controlled Spatial and Spectral Properties</s1></fA08><fA11 i1="01" i2="1"><s1>CREASEY (Megan)</s1></fA11><fA11 i1="02" i2="1"><s1>LEE (Ji-Hoon)</s1></fA11><fA11 i1="03" i2="1"><s1>ZHIMING WANG</s1></fA11><fA11 i1="04" i2="1"><s1>SALAMO (Gregory J.)</s1></fA11><fA11 i1="05" i2="1"><s1>XIAOQIN LI</s1></fA11><fA14 i1="01"><s1>Department of Physics, University of Texas at Austin</s1><s2>Austin, Texas 78712</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical Engineering, Kwangwoon University</s1><s2>Seoul 139-701</s2><s3>KOR</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China</s1><s2>Chengdu 610054</s2><s3>CHN</s3><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>Institute for Nanoscale Science and Engineering, University of Arkansas</s1><s2>Fayetteville, Arkansas 72701</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>5169-5174</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27369</s2><s5>354000506816270170</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>50 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0415420</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Nano letters : (Print)</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Plantar quantum dot dusters (QDCs) consisting of six InGaAs quantum dots (QDs) formed around a GaAs nanomound are the most sophisticated self-assembled QDCs grown by molecular beam epitaxy thus far. We present the first photoluminescence measurements on individual hexa-QDCs with high spatial, spectral, and temporal resolution. In the best QDCs, the excitons confined in individual QDs are remarkably close in energy, exhibiting only a 10 meV spread. In addition, a biexponential decay profile and small variation in decay rates for different QDs was observed. 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